Faculty Information - Tsuji Katsuhiro |

（Last updated : 2024-05-01 14:00:02）

Tsuji Katsuhiro

Department / Course Hiroshima City University Graduate School Graduate School of Information Sciences Major in Systems Engineering

Hiroshima City University Faculty of Information Sciences Department of Systems Engineering

Job Research Associate

E-Mail Address

Academic background
2020/09 Degree Acquisition

Present specialized field
Electronic Device/Electronic Equipment keyword(Semiconductor devices, Integrated Circuits, Device modeling, Device simulation, Parameter extraction)

Book and thesis
Papers	Study on effective MOSFET channel length extracted from gate capacitance Japanese J. Appl. Phys. 57,pp.016601-1-016601-7 (Co-authored) 2018/01/01
Papers	Study on Threshold Voltage Evaluated by Charge-Based Capacitance Measurement IEICE TRANSACTIONS on Electronics VOL.E99-C (NO.4),pp.466-473 (Co-authored) 2016/04
Papers	Development of Test Structure for Variability Evaluation Using Charge-Based Capacitance Measurement IEICE TRANSACTIONS on Electronics VOL.E97-C (NO.11),pp.1117-1123 (Co-authored) 2014/11/01
Papers	Reconsideration of Effective Channel Length for Metal-Oxide-Semiconductor Field Effect Transistor Japanese Journal of Applied Physics Vol. 53,pp.064303 (Co-authored) 2014/05
Papers	Measurement of Channel Length Variability Proc. IEEE Workshop on Variability Modeling and Characterization at ICCAD (Co-authored) 2013/11
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Academic conference presentation
2014/03	Comparison of Channel Length Extracted from Gate Capacitance with That Extracted from Channel Resistance (Proc. Int. Conf. on Microelectronic Test Structures)
2012/11	Difference in Threshold-Voltage Variability Caused by Measurement Method (Proc. IEEE Workshop on Variability Modeling and Characterization at ICCAD)
2012/03	Threshold Voltage Variation Extracted from MOSFET C-V Curves by Charge-Based Capacitance Measurement (Proc. Int. Conf. on Microelectronic Test Structures)
2011/04	Electrical Estimation of Channel Dopant Unifomity Using Test MOSFET Array (Proc. Int. Conf. on Microelectronic Test Structures)
2011/04	Evaluation of MOSFET C-V Curve Variation Using Test Structure for Charge-Based Capacitance Measurement (Proc. Int. Conf. on Microelectronic Test Structures)
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Belonging society
1996/08 ～	The Japan Society of Applied Physics
1995/08 ～	The Institute of Electronics, Information and Communication Engineers